TGAN 80N60F2DS transistor IGBT canal N 80A 600V encapsulado TO-3P
MÓDULO IGBT
TGAN80N60F2DS 80N60F2DS IGBT 80A 600V
- Tipo de dispositivo:IGBT (Insulated Gate Bipolar Transistor)
- Marca:Trrino
- Código de fecha:18+
- Paquete caja:TO-3P
- Continuous Collector Current (IC):80A
- Collector-Emitter Voltage (VCEO):600V
- Maximum Power Dissipation (Pd):625W
- Gate-Emitter Threshold Voltage (VGE(th)):4.0V – 6.0V
- Input Capacitance (Cies):6300pF
- Output Capacitance (Coes):370pF
- Total Gate Charge (Qg):390nC
- Switching Frequency:High-speed switching
- Tipo de paquete:D2PAK
- Rango de temperatura de funcionamiento:-55°C to +175°C
- Tipo de montaje:Surface Mount (SMD)
- Solicitud:Power switching, Motor control, Inverters
Related products
-
Brand :MÓDULO IGBTCotizar
IGBT Modules 7MBR75SB060-50 75A-600VC
-
CotizarBrand :
-
Brand :MÓDULO IGBTCotizar
FP50R12N2T7 IGBT Modulo 1200V 50AMP INFINEON
Reviews
There are no reviews yet.